DG858BW45 Datasheet, PDF (13/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

DG858BW45
40.0
35.0
Conditions:
I_T = 3000A
Cs = 3.0µF
30.0
25.0
20.0
T_j = 125˚C
T_j = 25˚C
15.0
20 25 30 35 40 45 50 55 60
Rate of rise of reverse gate current dI_GQ/dt - (A/µs)
Figure 22. Gate storage time vs rate of rise of reverse gate current
3.0
Conditions:
Cs = 3.0µF
dI_GQ/dt = 40A/µs
2.0
T_j = 125˚C
T_j = 25˚C
1.0
0
0
500
1000
1500
2000
2500
3000
On-state current I_T - (A)
Figure 23. Gate fall time vs on-state current
13/19