DG858BW45 Datasheet, PDF (12/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

DG858BW45
16000
14000
12000
Conditions:
T_j = 125˚C
V_DM = V_DRM
dI_GQ/dt = 40A/µs
10000
Cs = 4.0µF
Cs = 3.0µF
Cs = 2.5µF
Cs = 2.0µF
8000
6000
4000
2000
0
0
500
1000
1500
2000
2500
3000
On-state current I_T - (A)
Figure 20. Turn-off energy vs on-state current
25.0
22.5
Conditions:
Cs = 3.0µF
dI_GQ/dt = 40A/µs
20.0
T_j = 125˚C
T_j = 25˚C
3500
17.5
15.0
12.5
10.0
7.5
5.0
2.5
0
500
1000
1500
2000
2500
On-state current I_T - (A)
Figure 21. Gate storage time vs on-state current
3000
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