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| DG858BW45 Datasheet, PDF (7/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor | |||
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DG858BW45
4500
4000
3500
3000
Conditions:
Tj = 25ËC
IFGM = 40A
Cs = 3µF
Rs = 10 Ohms
dIT/dt = 300A/µs
dIFG/dt = 40A/µs
2500
2000
VD = 3000V
VD = 2000V
1500
1000
VD = 1000V
500
0
0
500
1000
1500
2000
2500
On-state current IT - (A)
Figure 9. Turn-on energy vs on-state current
8000
7000
6000
Conditions:
IT = 3000A, Tj = 25ËC,
Cs = 3.0µF, Rs = 10 Ohms
dIT/dt = 300A/µs,
dIFG/dt = 40A/µs
5000
3000
4000
3000
2000
1000
VD = 3000V
VD = 2000V
VD = 1000V
0
0 10 20 30 40 50 60 70 80
Peak forward gate current IFGM- (A)
Figure 10. Turn-on energy vs peak forward gate current
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