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DG858BW45 Datasheet, PDF (18/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor | |||
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DG858BW45
PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated
otherwise. DO NOT SCALE.
2 holes Ã3.6 x 2.0 deep (One in each electrode)
Auxiliary cathode connector Ã3.0
Gate connector Ã3.0
Ã120 max
Ã84.6 nom
Anode
Ã84.6 nom
72 max
Cathode
Nominal weight: 1700g
Clamping force: 40kN ±10%
Lead length: 600mm
Package outine type code: W
ASSOCIATED PUBLICATIONS
Title
Calculating the junction temperature or power semiconductors
GTO gate drive units
Recommendations for clamping power semiconductors
Use of V , r on-state characteristic
TO T
Impoved gate drive for GTO series connections
Application Note
Number
AN4506
AN4571
AN4839
AN5001
AN5177
18/19
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