DG858BW45 Datasheet, PDF (2/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

DG858BW45
SURGE RATINGS
Symbol
Parameter
Conditions
Max. Units
I_TSM
I²t
di /dt
T
dV /dt
D
L_S
Surge (non-repetitive) on-state current 10ms half sine. T_j = 125^oC
20.0
kA
I²t for fusing
Critical rate of rise of on-state current
Rate of rise of off-state voltage
10ms half sine. T_j =125^oC
V_D = 3000V, I_T = 3000A, T_j = 125^oC,
I
FG
>
40A,
Rise
time
>
1.0µs
To 66% V_DRM; R_GK ≤ 1.5Ω, T_j = 125^oC
To 66% V_DRM; V_RG = -2V, T_j = 125^oC
2.0 x 10⁶ A²s
300 A/µs
130
1000
V/µs
V/µs
Peak stray inductance in snubber circuit ^I_T ^{= 3000A, V}_D ^{= V}_DRM^,-^T_{- j} ^{= 125˚C, dI/}_GQ ^{= 40A/} 200
nH
µs, Cs = 3.0µF
GATE RATINGS
Symbol
Parameter
V_RGM
I_FGM
P_FG(AV)
P_RGM
di_GQ/dt
t
ON(min)
t_OFF(min)
Peak reverse gate voltage
Peak forward gate current
Average forward gate power
Peak reverse gate power
Rate of rise of reverse gate current
Minimum permissable on time
Minimum permissable off time
Conditions
Min. Max. Units
This value maybe exceeded during turn-off -
16
V
20 100 A
-
20 W
-
24 kW
20 60 A/µs
50
-
µs
100 -
µs
THERMAL AND MECHANICAL DATA
Symbol
Parameter
R_th(j-hs) DC thermal resistance - junction to
heatsink surface
R_th(c-hs) Contact thermal resistance
T_vj
T_OP/T_stg
-
Virtual junction temperature
Operating junction/storage temperature range
Clamping force
Conditions
Min. Max. Units
Double side cooled
- 0.011 ^oC/W
Anode side cooled
- 0.017 ^oC/W
Cathode side cooled
Clamping force 40.0kN
With mounting compound
per contact
- 0.03 ^oC/W
- 0.0021 ^oC/W
-40 125 ^oC
-40 125 ^oC
36.0 44.0 kN
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