DG406BP_15 Datasheet, PDF (9/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

4.0
Conditions: T_j = 125˚C, I_FGM = 30A,
C_S = 1.0µF, V_D = 2000V,
R_S = 10 Ohms, dI_T/dt = 300A/µs
3.0
t_r
DG406BP25
2.0
t_d
1.0
0
0
250
500
750
1000
1250
1500
On-state current I_T - (A)
Fig.13 Delay time & rise time vs turn-on current
5.0
Conditions:
T_j = 125˚C, I_T = 1000A,
C_S = 1.0µF,
R_S = 10 Ohms,
4.0
dI/dt = 300A/µs,
dI_FG/dt = 30A/µs,
V_D = 2000V
3.0
t_r
2.0
t_d
1.0
0
0
20
40
60
80
Peak forward gate current I_FGM - (A)
F_FI_iG_g.11₄4_DD_elE_aL_y A_timY _eT_&IM_rE_ise&_tiR_mIS_e E_vsT_pIM_eaE_{k forw}P_aE_rA_d K_gaF_teO_cR_uW_rreA_nR_t D
9/19