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| DG406BP_15 Datasheet, PDF (11/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor | |||
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2500
2000
Conditions:
Tj = 125ËC,
CS = 1.0µF,
dIGQ/dt = 30A/µs
1500
DG406BP25
VDRM
0.75x VDRM
1000
500
0.5x VDRM
0
0
250
500
750
1000
1250
1500
On-state current IT - (A)
FIG 17 TFUigR.1N7 TOuFrFn-oEfNf eEnReGrgYy vs oOnN-sStaTteAcTuErrCenUtRRENT
2500
2000
Conditions:
Tj = 125ËC,
CS = 1.0µF,
IT = 1000A
1500
VDRM
0.75x VDRM
1000
0.5x VDRM
500
10
20
30
40
50
60
Rate of rise of reverse gate current dIGQ/dt - (A/µs)
Fig.1F8IGTur1n8-oTfUf eRnNergOyFlFosEsNvEsRraGteYoLfOrisSeSof reRveArTseEgOaFteRcuISrrEenOtF
11/19
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