DG406BP_15 Datasheet, PDF (13/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

25
Conditions:
C_S = 1.0µF,
I_T = 1000A
20
DG406BP25
15
T_j = 125˚C
10
T_j = 25˚C
5
10
20
30
40
50
60
Rate of rise of reverse gate current dI_GQ/dt - (A/µs)
FIG 21 GATE STORAGE TIME RATE OF RISE OF
Fig.21 Gate storage time vs rate of rise of reverse gate current
2.0
Conditions:
C_S = 1.0µF,
dI_GQ/dt = 30A/µs
1.5
T_j = 125˚C
1.0
T_j = 25˚C
0.5
0
0
250
500
750
1000
1250
1500
On-state current I_T - (A)
FIG 22 _FG_igA_.T₂₂E_GF_aA_teLL_falT_l I_tM_imE_{e vs o}O_nN_-sS_taT_teA_cT_uE_rrC_enU_tRRENT
13/19