DG406BP_15 Datasheet, PDF (15/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

500
Conditions:
C_S = 1.0µF,
I_T = 1000A
450
400
T_j = 125˚C
T_j = 25˚C
DG406BP25
350
300
250
10
20
30
40
50
60
Rate of rise of reverse gate current dI_GQ/dt - (A/µs)
Fig.25 Peak reverse gate current vs rate of rise of reversegate current
4000
Conditions:
C_S = 1.0µF,
dI_GQ/dt = 30A/µs
3000
T_j = 125˚C
2000
T_j = 25˚C
1000
0
0
250
500
750
1000
1250
1500
On-state current I_T - (A)
Fig.26 Turn-off gate charge vs on-state current
15/19