DG406BP_15 Datasheet, PDF (7/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

1000
750
Conditions:
T_j = 25˚C, I_FGM = 30A,
C_S = 1.0µF,
dI/dt = 300A/µs,
dI_FG/dt = 30A/µs
500
250
V_D = 2000V
V_D = 1500V
V_D = 1000V
DG406BP25
0
0
250
500
750
1000
1250
On-state current I_T - (A)
Fig.8 Turn-on energy vs on-state current
2000
1500
Conditions:
T_j = 25˚C, I_T = 1000A,
C_S = 1.0µF, R_S = 10 Ohms
dI/dt = 300A/µs,
dI_FG/dt = 30A/µs
1500
1000
500
V_D = 2000V
V_D = 1500V
V_D = 1000V
0
0
20
40
60
80
Peak forward gate current I_FGM - (A)
F_FI_iG_g.99_TuT_rU_nR_-oN_{n e}O_nN_erE_gyN_vE_sR_pG_eY_{ak for}P_wE_aA_rdK_gF_atO_eR_cW_urrA_eR_ntD
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