DG406BP_15 Datasheet, PDF (16/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

DG406BP25
4000
3500
Conditions:
C_S = 1.0µF,
I_T = 1000A
3000
2500
T_j = 125˚C
2000
T_j = 25˚C
1500
10
20
30
40
50
60
Rate of rise of reverse gate current dI_GQ/dt - (A/µs)
Fig.27 Turn-off gate charge vs rate of rise of reverse gate current
1000
V_D = 1250V
T_j = 125˚C
500
V_D = 1650V
0
0.1
1.0
10
100
1000
Gate cathode resistance R_GK - (Ohms)
Fig.28 Rate of rise of off-state voltage vs gate cathode resistance
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