DG406BP_15 Datasheet, PDF (10/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

DG406BP25
2000
Conditions:
T_j = 25˚C,
C_S = 1.0µF,
dI_GQ/dt = 30A/µs
1500
1000
500
V_DRM
0.75x V_DRM
0.5x V_DRM
0
0
250
500
750
1000
1250
1500
On-state current I_T - (A)
Fig.15 Turn-off energy vs on-state current
2000
Conditions:
T_j = 25˚C,
C_S = 1.0µF,
I_T = 1000A
1500
1000
500
V_DRM
0.75x V_DRM
0.5x V_DRM
0
10
20
30
40
50
60
Rate of rise of reverse gate current dI_GQ/dt - (A/µs)
FIG 16 TURN OFF ENERGY RATE OF RISE OF
Fig.16 Turn-off energy vs rate of rise of reverse gate current
10/19