DG406BP_15 Datasheet, PDF (14/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

DG406BP25
2.00
1.75
Conditions:
C_S = 1.0µF,
I_T = 1000A
1.50
T_j = 125˚C
1.25
1.00
10
T_j = 25˚C
20
30
40
50
60
Rate of rise of reverse gate current dI_GQ/dt - (A/µs)
Fig^F.2^I3^GG²a³te^Gfa^All^Tti^Em^Fe^Avs^LLra^Tte^IMof^Erise ^Rof^Ar^Tev^Eer^Os^Fe g^Ra^It^Se^Ecu^Or^Frent
500
Conditions:
C_S = 1.0µF,
dI_GQ/dt = 30A/µs
400
T_j = 125˚C
T_j = 25˚C
300
200
100
0
250
500
750
1000
1250
Turn-off current I_T - (A)
Fig.24 Peak reverse gate current vs turn-off current
1500
14/19