MTC3588G6_16 Datasheet, PDF (9/13 Pages) Cystech Electonics Corp. – N- And P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C102G6
Issued Date : 2016.05.03
Revised Date : 2016.10.11
Page No. : 9/13
P-channel Typical Characteristics(Cont.)
Typical Transfer Characteristics
20
10
VDS=5V
16
1
12
Forward Transfer Admittance vs Drain Current
VDS=-5V
VDS=-10V
8
0.1
4
0
0
1
2
3
4
5
VGS, Gate-Source Voltage(V)
0.01
0.001
1
D=0.5
Transient Thermal Response Curves
0.2
0.1 ^0.1
0.05
0.02
0.01
0.01
Pulsed
Ta=25°C
0.01
0.1
1
10
-ID, Drain Current(A)
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=110°C/W
Single Pulse
0.001
0.0001
0.001
0.01
0.1
1
10
t1, Square Wave Pulse Duration(s)
Recommended Soldering Footprint
100
1000
MTC3588G6
CYStek Product Specification