MTC3588G6_16 Datasheet, PDF (2/13 Pages) Cystech Electonics Corp. – N- And P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C102G6
Issued Date : 2016.05.03
Revised Date : 2016.10.11
Page No. : 2/13
Absolute Maximum Ratings (Ta=25C)
Parameter
Symbol
Drain-Source Breakdown Voltage
Gate-Source Voltage
Continuous Drain Current @TA=25 C (Note 1)
Continuous Drain Current @TA=70 C (Note 1)
Pulsed Drain Current (Note 2)
Total Power Dissipation (Note 1)
Linear Derating Factor
BVDSS
VGS
ID
IDM
PD
Operating Junction and Storage Temperature
Tj, Tstg
Note : 1.Surface mounted on 1 in²copper pad of FR-4 board, t≤5 sec.
2.Pulse width limited by maximum junction temperature.
Limits
N-channel P-channel
14
-14
±8
±8
5.4
-3.6
4.3
-2.9
20
-20
1.14
0.01
-55~+150
Unit
V
A
W
W / C
C
N-Channel Electrical Characteristics (Tj=25C, unless otherwise specified)
Symbol
Min.
Typ. Max. Unit
Test Conditions
Static
BVDSS
14
∆BVDSS/∆Tj
-
VGS(th)
0.4
IGSS
-
-
IDSS
-
-
*RDS(ON)
-
-
-
V VGS=0V, ID=250μA
8
- mV/C Reference to 25C, ID=1mA
-
1.0
V VDS=VGS, ID=250μA
-
±100 nA VGS=±8V, VDS=0V
-
-
1
10
μA
VDS=12V, VGS=0V
VDS=10V, VGS=0V, Tj=70C
17.6
25
ID=5A, VGS=4.5V
24.7
33
m _{ID=4.6A, VGS=2.5V}
*GFS
-
5.6
-
S VDS=5V, ID=3A
Dynamic
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
*Qg
*Qgs
*Qgd
Rg
-
407
-
-
115
-
pF VDS=10V, VGS=0V, f=1MHz
-
100
-
-
5
-
-
-
18.8
-
49.6
-
ns VDS=10V, ID=1A, VGS=5V, RG=3.3Ω
-
30.8
-
-
6.5
-
-
0.7
-
nC VDS=10V, ID=3A, VGS=4.5V
-
2.3
-
-
1
-
Ω f=1MHz
Source-Drain Diode
*VSD
-
0.87
1.2
V VGS=0V, IS=5.2A
*trr
*Qrr
-
-
12
2.3
-
-
ns
nC
IF=3A, VGS=0V, dIF/dt=100A/μs
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
MTC3588G6
CYStek Product Specification