MTC3588G6_16 Datasheet, PDF (5/13 Pages) Cystech Electonics Corp. – N- And P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C102G6
Issued Date : 2016.05.03
Revised Date : 2016.10.11
Page No. : 5/13
N-channel Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
1000
Ciss
Threshold Voltage vs Junction Tempearture
1.6
1.4
ID=250μA
Coss
1.2
100
1.0
Crss
0.8
0.6
10
0.1
1
VDS, Drain-Source Voltage(V)
0.4
10
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Single Pulse Power Rating, Junction to Ambient
50
40
TJ(MAX)=150°C
TA=25°C
RθJA=110°C/W
30
20
10
0
0.001 0.01
0.1
1
10
100
Pulse Width(s)
Gate Charge Characteristics
10
ID=3A
8
VDS=10V
6
4
2
0
0
2
4
6
8 10 12 14
Qg, Total Gate Charge(nC)
Maximum Safe Operating Area
100
10
RDS(ON)
Limited
100μs
1ms
1
10ms
100ms
0.1 TA=25°C, Tj=150°C,
VGS=4.5V, RθJA=110°C/W
DC
Single Pulse
0.01
0.01
0.1
1
10
100
VDS, Drain-Source Voltage(V)
MTC3588G6
Maximum Drain Current vs JunctionTemperature
6.0
5.0
4.0
3.0
2.0
1.0
TA=25°C, VGS=4.5V, RθJA=110°C/W
0.0
25
50 75 100 125 150 175
Tj, Junction Temperature(°C)
CYStek Product Specification