MTC3588G6_16 Datasheet, PDF (7/13 Pages) Cystech Electonics Corp. – N- And P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C102G6
Issued Date : 2016.05.03
Revised Date : 2016.10.11
Page No. : 7/13
P-channel Typical Characteristics
Typical Output Characteristics
20
5V, 4V
16
-VGS=3V
12
-VGS=2.5V
8
-VGS=2V
4
-
0
0
1
2
3
4
5
-VDS, Drain-Source Voltage(V)
1000
Static Drain-Source On-State resistance vs Drain Current
VGS=-1.5V
VGS=-1.8V
Brekdown Voltage vs Ambient Temperature
1.6
1.4
1.2
1.0
0.8
0.6
ID=-250μA,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=0V
1.0
Tj=25°C
0.8
100
Tj=150°C
0.6
VGS=-2.5V _VGS=-4.5V
10
0.01
0.1
1
10
-ID, Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
300
ID=-3.6A
250
200
150
100
50
0
012345678
-VGS, Gate-Source Voltage(V)
0.4
0.2
0
2
4
6
8
10
-IDR, Reverse Drain Current (A)
Drain-Source On-State Resistance vs Junction Tempearture
1.6
1.4
VGS=-4.5V, ID=-3.6A
1.2
1.0
0.8
0.6
RDS(ON)@Tj=25°C : 45.1mΩ typ.
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTC3588G6
CYStek Product Specification