MTC3588G6_16 Datasheet, PDF (3/13 Pages) Cystech Electonics Corp. – N- And P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C102G6
Issued Date : 2016.05.03
Revised Date : 2016.10.11
Page No. : 3/13
P-Channel Electrical Characteristics (Tj=25C, unless otherwise specified)
Symbol
Min.
Typ. Max. Unit
Test Conditions
Static
BVDSS
-14
∆BVDSS/∆Tj
-
VGS(th)
-0.4
IGSS
-
-
IDSS
-
-
*RDS(ON)
-
-
-
V VGS=0V, ID=-250μA
-5
- mV/C Reference to 25C, ID=-1mA
-
-1.0
V VDS=VGS, ID=-250μA
-
±100 nA VGS=±8V, VDS=0V
-
-
-1
-10
μA
VDS=-12V, VGS=0V
VDS=-10V, VGS=0, Tj=70C
45.1
60
ID=-3.6A, VGS=-4.5V
65.6
87
m _{ID=-3.2A, VGS=-2.5V}
*GFS
-
5.6
-
S VDS=-5V, ID=-2A
Dynamic
Ciss
-
Coss
-
Crss
-
*td(ON)
-
*tr
-
*td(OFF)
-
*tf
-
*Qg
-
*Qgs
-
*Qgd
-
Rg
-
Source-Drain Diode
*VSD
-
*trr
-
*Qrr
-
561
-
153
-
pF VDS=-10V, VGS=0V, f=1MHz
142
-
5
-
18.8
-
49.6
-
ns VDS=-10V, ID=-1A, VGS=-5V, RG=3.3Ω
30.8
-
8
-
1
-
nC VDS=-10V, ID=-2A, VGS=-4.5V
2.8
-
9.3
-
 f=1MHz
-0.9
-1.2
V VGS=0V, IS=-3.4A
27
7
-
-
ns
nC
IF=-2A, VGS=0V, dIF/dt=100A/μs
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
Thermal Data
Parameter
Symbol
Value
Thermal Resistance, Junction-to-case, max
RθJC
80
Thermal Resistance, Junction-to-ambient, max
RθJA
110 (Note )
Note :.Surface mounted on 1 in²copper pad of FR-4 board, t≤5 sec; 180C/W when mounted on minimum copper pad
Unit
C/W
MTC3588G6
CYStek Product Specification