MTC3588G6_16 Datasheet, PDF (6/13 Pages) Cystech Electonics Corp. – N- And P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
N-channel Typical Characteristics(Cont.)
Spec. No. : C102G6
Issued Date : 2016.05.03
Revised Date : 2016.10.11
Page No. : 6/13
Typical Transfer Characteristics
12
VDS=5V
10
8
6
4
2
0
0
0.5
1
1.5
2
2.5
3
VGS, Gate-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
10
VDS=5V
1
VDS=10V
0.1
0.01
0.001
Pulsed
Ta=25°C
0.01
0.1
1
10
ID, Drain Current(A)
1
D=0.5
0.2
0.1 ^0.1
0.05
0.02
0.01
0.01
Transient Thermal Response Curves
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=110°C/W
0.001
1.E-04
Single Pulse
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
MTC3588G6
CYStek Product Specification