MTC3588G6_16 Datasheet, PDF (8/13 Pages) Cystech Electonics Corp. – N- And P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C102G6
Issued Date : 2016.05.03
Revised Date : 2016.10.11
Page No. : 8/13
P-channel Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
1000
1.4
Ciss
1.2
Threshold Voltage vs Junction Tempearture
ID=-250μA
1.0
Coss
0.8
Crss
100
0.1
1
10
-VDS, Drain-Source Voltage(V)
Single Pulse Power Rating, Junction to Ambient
50
40
TJ(MAX)=150°C
TA=25°C
RθJA=110°C/W
30
0.6
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
ID=-2A
8
VDS=-10V
6
20
4
10
0
0.001 0.01
0.1
1
10
100
Pulse Width(s)
Maximum Safe Operating Area
100
10
RDS(ON)
Limited
100μs
1ms
1
10ms
0.1 TA=25°C, Tj=150°C,
VGS=-4.5V, RθJA=110°C/W
Single Pulse
100m
s
DC
0.01
0.01
0.1
1
10
100
-VDS, Drain-Source Voltage(V)
2
0
0 2 4 6 8 10 12 14 16
Qg, Total Gate Charge(nC)
Maximum Drain Current vs JunctionTemperature
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5 ^{TA=25°C, VGS=-4.5V, RθJA=110°C/W}
0.0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
MTC3588G6
CYStek Product Specification