MTC3588G6_16 Datasheet, PDF (4/13 Pages) Cystech Electonics Corp. – N- And P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C102G6
Issued Date : 2016.05.03
Revised Date : 2016.10.11
Page No. : 4/13
N-channel Typical Characteristics
Typical Output Characteristics
20
Brekdown Voltage vs Ambient Temperature
1.4
5V, 4V, 3.5V, 3V, 2.5V
16
1.2
12
VGS=2V
8
4
VGS=1.5V
0
0
1
2
3
4
5
VDS, Drain-Source Voltage(V)
1000
Static Drain-Source On-State resistance vs Drain Current
VGS=1.5V VGS=1.8V
100
1.0
0.8
ID=250μA,
0.6
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=0V
1.0
Tj=25°C
0.8
10
VGS=4.5V
VGS=2.5V
1
0.01
0.1
1
10
100
ID, Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
200
180
ID=5A
160
140
120
100
80
60
40
20
0
012345678
VGS, Gate-Source Voltage(V)
0.6
Tj=150°C
0.4
0.2
0
1
2
3
4
5
IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
1.8
1.6
VGS=4.5V, ID=5A
1.4
1.2
1.0
0.8
0.6
RDS(ON)@Tj=25°C : 17.6mΩ typ.
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTC3588G6
CYStek Product Specification