MTB080C10Q8 Datasheet, PDF (9/12 Pages) Cystech Electonics Corp. – N- and P-channel enhancement mode power MOSFET

CYStech Electronics Corp.
Spec. No. : C703Q8
Issued Date : 2016.07.22
Revised Date :
Page No. : 9/12
Typical Characteristics(Cont.) : Q2(P-channel)
Typical Transfer Characteristics
8
VDS=-10V
6
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
1000
TJ(MAX)=150°C
TA=25°C
100
RθJA=78°C/W
4
10
2
0
0
1
1
2
3
4
-VGS, Gate-Source Voltage(V)
1
5
0.001 0.01
Transient Thermal Response Curves
D=0.5
0.1
1
10
Pulse Width(s)
0.2
0.1
0.1
0.05
0.02
0.01
0.01
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=78°C/W
100 1000
0.001
1.E-04
Single Pulse
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
MTB080C10Q8
CYStek Product Specification