MTB080C10Q8 Datasheet, PDF (7/12 Pages) Cystech Electonics Corp. – N- and P-channel enhancement mode power MOSFET

CYStech Electronics Corp.
Spec. No. : C703Q8
Issued Date : 2016.07.22
Revised Date :
Page No. : 7/12
Typical Characteristics : Q2( P-channel)
Typical Output Characteristics
8
10V
9V
6
8V
7V
6V
5V
4
4V
1.4
3.5V
1.2
1
3V
Brekdown Voltage vs Ambient Temperature
2
-VGS=2.5V
0
0
1
2
3
4
5
-VDS, Drain-Source Voltage(V)
1000
Static Drain-Source On-State resistance vs Drain Current
0.8
-ID=250μA,
VGS=0V
0.6
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=0V
1
Tj=25°C
-VGS=4.5V -VGS=4V
0.8
0.6
Tj=150°C
-VGS=10V
100
0.01
0.1
1
10
100
-ID, Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
500
450
400
-ID=2A
350
300
250
200
150
100
50
0
0
2
4
6
8
10
-VGS, Gate-Source Voltage(V)
0.4
0.2
0
2
4
6
8
10
-IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
2
1.8
1.6
-VGS=10V, -ID=2A
1.4
1.2
1
0.8
0.6
RDSON@Tj=25°C : 174mΩ typ.
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTB080C10Q8
CYStek Product Specification