MTB080C10Q8 Datasheet, PDF (4/12 Pages) Cystech Electonics Corp. – N- and P-channel enhancement mode power MOSFET

CYStech Electronics Corp.
Spec. No. : C703Q8
Issued Date : 2016.07.22
Revised Date :
Page No. : 4/12
Typical Characteristics : Q1( N-channel )
Typical Output Characteristics
12
1.4
Brekdown Voltage vs Ambient Temperature
10
8
6
4
2
0
0
10V, 9V, 8V, 7V, 6V, 5V,4.5V
VGS=3V
4V
3.5V
1
2
3
4
5
VDS, Drain-Source Voltage(V)
1.2
1
0.8
ID=250μA,
VGS=0V
0.6
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
1000
Static Drain-Source On-State resistance vs Drain Current
VGS=4V
100
VGS=4.5V
VGS=10V
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=0V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
10
0.01
0.1
1
10
100
ID, Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
400
350
ID=3A
300
250
200
150
100
50
0
0
2
4
6
8
10
VGS, Gate-Source Voltage(V)
0.2
0
2
4
6
8
10
12
IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
2.4
VGS=10V, ID=3A
2
1.6
1.2
0.8
RDSON@Tj=25°C : 74mΩ typ.
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTB080C10Q8
CYStek Product Specification