MTB080C10Q8 Datasheet, PDF (2/12 Pages) Cystech Electonics Corp. – N- and P-channel enhancement mode power MOSFET

CYStech Electronics Corp.
Spec. No. : C703Q8
Issued Date : 2016.07.22
Revised Date :
Page No. : 2/12
Absolute Maximum Ratings (Ta=25°C)
Parameter
Limits
Symbol
Unit
N-channel P-channel
Drain-Source Breakdown Voltage
Gate-Source Voltage
BVDSS
100
-100
VGS
±20
±20
V
Continuous Drain Current @TA=25 °C (Note 2)
2.9
-1.9
ID
Continuous Drain Current @TA=70 °C (Note 2)
2.3
-1.5
A
Pulsed Drain Current (Note 1)
IDM
12
-8
Power Dissipation for Dual Operation
2
Power Dissipation for Single Operation
PD
1.6 (Note 2)
W
0.9 (Note 3)
Operating Junction and Storage Temperature Range Tj; Tstg
-55~+150
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
RθJC
RθJA
Note : 1.Pulse width limited by maximum junction temperature.
2.Surface mounted on 1 in² copper pad of FR-4 board, pulse width≤10s.
3.Surface mounted on minimum copper pad, pulse width≤10s.
Value
40
78 (Note 2)
135 (Note 3)
Unit
°C/W
N-Channel Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit
Test Conditions
Static
BVDSS
100
-
-
V
VGS=0V, ID=250μA
VGS(th)
1.0
-
2.5
VDS=VGS, ID=250μA
IGSS
-
-
±100 nA VGS=±20V, VDS=0V
IDSS
-
-
-
-
1
10
μA
VDS=80V, VGS=0V
VDS=80V, VGS=0V, Tj=55°C
-
*RDS(ON)
-
74
90
96
120
mΩ
VGS=10V, ID=3A
VGS=4.5V, ID=3A
*GFS
-
5.9
-
S VDS=10V, ID=3A
Dynamic
Ciss
-
333
-
Coss
-
47
-
pF VDS=50V, VGS=0V, f=1MHz
Crss
-
18
-
*td(ON)
-
6.2
9.3
*tr
*td(OFF)
-
-
17.4
18.2
25.8
27.3
ns VDS=50V, ID=1A, VGS=10V, RG=3Ω
*tf
-
6.8
10.2
MTB080C10Q8
CYStek Product Specification