MTB080C10Q8 Datasheet, PDF (8/12 Pages) Cystech Electonics Corp. – N- and P-channel enhancement mode power MOSFET

CYStech Electronics Corp.
Typical Characteristics(Cont.) : Q2(P-channel)
Spec. No. : C703Q8
Issued Date : 2016.07.22
Revised Date :
Page No. : 8/12
Capacitance vs Drain-to-Source Voltage
1000
Ciss
100
C _oss
Crss
10
0
10
5 10 15 20 25 30 35 40 45 50
-VDS, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
1
Threshold Voltage vs Junction Tempearture
1.6
1.4
1.2
-ID=1mA
1
0.8
0.6
-ID=250μA
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=-50V
8
VDS=-20V
6
0.1
0.01
0.001
100
-VDS=10V
Pulsed
Ta=25°C
0.01
0.1
1
10
-ID, Drain Current(A)
Maximum Safe Operating Area
4
VDS=-80V
2
ID=-1.9A
0
0 2 4 6 8 10 12 14 16 18 20
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
2.5
10
RDSON
Limited
1
100μs
1ms
10ms
0.1
0.01
0.01
TA=25°C, Tj=150°C
VGS=-10V, RθJA=78°C/W
Single Pulse
100ms
1s
DC
0.1
1
10
100 1000
-VDS, Drain-Source Voltage(V)
2
1.5
1
TA=25°C
0.5
VGS=-10V
RθJA=78°C/W
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
MTB080C10Q8
CYStek Product Specification