MTB080C10Q8 Datasheet, PDF (5/12 Pages) Cystech Electonics Corp. – N- and P-channel enhancement mode power MOSFET

CYStech Electronics Corp.
Spec. No. : C703Q8
Issued Date : 2016.07.22
Revised Date :
Page No. : 5/12
Typical Characteristics(Cont.) : Q1( N-channel)
Capacitance vs Drain-to-Source Voltage
1000
Threshold Voltage vs Junction Tempearture
1.4
Ciss
1.2
ID=1mA
1
100
C _oss
0.8
10
0
10
Crss
5 10 15 20 25 30 35 40 45 50
VDS, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
1
0.1
0.01
0.001
100
VDS=10V
Pulsed
Ta=25°C
0.01
0.1
1
10
ID, Drain Current(A)
Maximum Safe Operating Area
0.6
ID=250μA
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=50V
8
VDS=20V
6
4
VDS=80V
2
ID=2.9A
0
0
2
4
6
8
10
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
3
10
RDSON
Limited
1
100μs
1ms
10ms
0.1 _{TA=25°C, Tj=150°C}
VGS=10V, RθJA=78°C/W
Single Pulse
0.01
100ms
1s
DC
0.01
0.1
1
10
100 1000
VDS, Drain-Source Voltage(V)
2.5
2
1.5
1
TA=25°C
VGS=10V
0.5
RθJA=78°C/W
0
25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTB080C10Q8
CYStek Product Specification