MTB080C10Q8 Datasheet, PDF (3/12 Pages) Cystech Electonics Corp. – N- and P-channel enhancement mode power MOSFET

*Qg
-
*Qgs
-
*Qgd
-
Source-Drain Diode
*VSD
-
*IS
-
*ISM
-
CYStech Electronics Corp.
Spec. No. : C703Q8
Issued Date : 2016.07.22
Revised Date :
Page No. : 3/12
8
12
1.5
-
nC VDS=80V, ID=2.9A, VGS=10V
3.1
-
0.75
1.2
-
2.1
-
8.4
V VGS=0V, IS=1A
A
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
P-Channel Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min.
Typ. Max. Unit
Test Conditions
Static
BVDSS
VGS(th)
IGSS
IDSS
-100
-1.0
-
-
-
-
*RDS(ON)
-
*GFS
-
Dynamic
Ciss
-
Coss
-
Crss
-
*td(ON)
-
*tr
-
*td(OFF)
-
*tf
-
*Qg
-
*Qgs
-
*Qgd
-
Source-Drain Diode
*VSD
-
*IS
-
*ISM
-
-
-
-
-
-
174
195
6
668
44
29
7.8
18.4
34.4
8.6
16.6
2
4
-0.77
-
-
-
-2.5
±100
-1
-10
226
255
-
-
-
-
11.7
27.6
51.6
12.9
25
-
-
-1.2
-2.1
-8.4
V
VGS=0V, ID=-250μA
VDS=VGS, ID=-250μA
nA VGS=±20V, VDS=0V
μA
VDS=-80V, VGS=0V
VDS=-80V, VGS=0V, Tj=55°C
mΩ
VGS=-10V, ID=-2A
VGS=-4.5V, ID=-1A
S VDS=-10V, ID=-2A
pF VDS=-50V, VGS=0V, f=1MHz
ns VDS=-50V, ID=-1A, VGS=-10V, RG=3Ω
nC VDS=-80V, ID=-1.9A, VGS=-10V
V VGS=0V, IS=-1A
A
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTB080C10Q8
CYStek Product Specification