MTB080C10Q8 Datasheet, PDF (1/12 Pages) Cystech Electonics Corp. – N- and P-channel enhancement mode power MOSFET

CYStech Electronics Corp.
Spec. No. : C703Q8
Issued Date : 2016.07.22
Revised Date :
Page No. : 1/12
N- and P-channel enhancement mode power MOSFET
MTB080C10Q8
BVDSS
ID@VGS=10V(-10V), TA=25°C
RDSON(typ.) @VGS=(-)10V
RDSON(typ.) @VGS=(-)4.5V
N-CH
100V
2.9A
74mΩ
90mΩ
P-CH
-100V
-1.9A
174mΩ
195mΩ
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free lead plating and halogen-free package
Equivalent Circuit
MTB080C10Q8
Outline
SOP-8
D2
D2
D1
D1
G：Gate S：Source D：Drain
Pin 1
G2
S2
G1
S1
Ordering Information
Device
MTB080C10Q8-0-T3-G
Package
SOP-8
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB080C10Q8
CYStek Product Specification