X2P376 Datasheet, PDF (4/14 Pages) AMI SEMICONDUCTOR – 0.15mm Structured ASIC

XPressArray-II 0.15mm Structured ASIC
Data Sheet
4.0 XPressArray-II Architecture
Figure 3 shows the XPressArray-II device architecture with
embedded block RAMs, DCI, DDR support, DLLs, PLLs, and
support for a full compliment of I/O standards.
DCI
BRAM
I/Os
I/Os
DDR
DLL DLL
DCI
BRAM
PLL
BRAM
BRAM
DLL DLL
DDR
DCI
I/Os
PLL
I/Os
BRAM
DCI
Figure 3: XPressArray-II Architecture
5.0 I/O Description
The XPressArray-II I/O ring is composed of uniform I/O cell sites
and each site may be customized to support any I/O standard.
The I/O power ring is divided into eight segments, making it
compatible with the FPGA products and power supply rings built
into the packages.
I/O cells are available for a wide variety of standards as listed in
Table 3. I/O cells operate at 1.5V, 1.8V, 2.5V, and 3.3V. 3.3V
tolerant I/Os are also available. Differential signaling standards
typically require two pad sites. Signaling standards requiring a
reference voltage typically share a common reference voltage
within an I/O power ring segment, with the reference voltage
being supplied through an I/O site from an off-chip source.
Figure 4 shows the architecture of the I/O cell. Included are
programmable pull-up, pull-down resistors as well as a bus-hold
latch to limit noise on tri-stated signal busses. Dedicated dual-
data rate (DDR) flip-flops facilitate high-speed communications
with I/O operating at up to 1Gbps using LVDS transceivers in
conjunction with DLL/PLL clock management circuits.
Digital controlled impedance is available on many I/O standards
to eliminate off-chip termination resistors. Figure 5 illustrates the
termination schemes available on all XPressArray-II I/O cells.
Designers can use the DDR and DCI features of the
XPressArray-II I/O cell for DDR SDRAM memory and parallel
high-speed point-to-point interfaces.
AMI Semiconductor - Preliminary
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