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| MT47H64M8B6-25ELDTR Datasheet, PDF (45/133 Pages) Micron Technology – 512Mb: x4, x8, x16 DDR2 SDRAM | |||
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512Mb: x4, x8, x16 DDR2 SDRAM
Input Electrical Characteristics and Operating Conditions
Input Electrical Characteristics and Operating Conditions
Table 15: Input DC Logic Levels
All voltages are referenced to VSS
Parameter
Symbol
Min
Input high (logic 1) voltage
Input low (logic 0) voltage
VIH(DC)
VIL(DC)
VREF(DC) + 125
â300
Note: 1. VDDQ + 300mV allowed provided 1.9V is not exceeded.
Max
VDDQ1
VREF(DC) - 125
Units
mV
mV
Table 16: Input AC Logic Levels
All voltages are referenced to VSS
Parameter
Symbol
Min
Input high (logic 1) voltage (-37E/-5E)
Input high (logic 1) voltage (-187E/-25E/-25/-3E/-3)
Input low (logic 0) voltage (-37E/-5E)
Input low (logic 0) voltage (-187E/-25E/-25/-3E/-3)
VIH(AC)
VIH(AC)
VIL(AC)
VIL(AC)
VREF(DC) + 250
VREF(DC) + 200
â300
â300
Note: 1. Refer to AC Overshoot/Undershoot Specification (page 55).
Figure 11: Single-Ended Input Signal Levels
1,150mV
VIH(AC)
Max
VDDQ1
VDDQ1
VREF(DC) - 250
VREF(DC) - 200
Units
mV
mV
mV
mV
1,025mV
936mV
918mV
900mV
882mV
864mV
775mV
VIH(DC)
VREF + AC noise
VREF + DC error
VREF - DC error
VREF - AC noise
VIL(DC)
650mV
VIL(AC)
Note: 1. Numbers in diagram reflect nominal DDR2-400/DDR2-533 values.
PDF: 09005aef82f1e6e2
512MbDDR2.pdf - Rev. T 2/12 EN
45
Micron Technology, Inc. reserves the right to change products or specifications without notice.
 2004 Micron Technology, Inc. All rights reserved.
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