MT47H64M8B6-25ELDTR Datasheet, PDF (32/133 Pages) Micron Technology – 512Mb: x4, x8, x16 DDR2 SDRAM

Table 12: AC Operating Specifications and Conditions (Continued)
Not all speed grades listed may be supported for this device; refer to the title page for speeds supported; Notes: 1–5 apply to the entire table;
V_DDQ = 1.8V ±0.1V, V_DD = 1.8V ±0.1V
AC Characteristics
-187E
-25E
-25
-3E
-3
-37E
-5E
Parameter
Symbol Min Max Min Max Min Max Min Max Min Max Min Max Min Max Units Notes
Period jitter
t_{JITper –90 90 –100 100 –100 100 –125 125 –125 125 –125 125 –125 125 ps}
12
Half period
t_{JITdty –75 75 –100 100 –100 100 –125 125 –125 125 –125 125 –150 150 ps}
13
Cycle to cycle
t_JITcc
180
200
200
250
250
250
250
ps
14
Cumulative error, ^tERR_2per –132 132 –150 150 –150 150 –175 175 –175 175 –175 175 –175 175 ps
15
2 cycles
Cumulative error, ^tERR_3per –157 157 –175 175 –175 175 –225 225 –225 225 –225 225 –225 225 ps
15
3 cycles
Cumulative error, ^tERR_4per –175 175 –200 200 –200 200 –250 250 –250 250 –250 250 –250 250 ps
15
4 cycles
Cumulative error, ^tERR_5per –188 188 –200 200 –200 200 –250 250 –250 250 –250 250 –250 250 ps 15, 16
5 cycles
Cumulative error,
6–10 cycles
t_{ERR6– –250 250 –300 300 –300 300 –350 350 –350 350 –350 350 –350 350 ps 15, 16}
10per
Cumulative error, ^tERR_11– –425 425 –450 450 –450 450 –450 450 –450 450 –450 450 –450 450 ps
15
11–50 cycles
50per
DQS output access ^tDQSCK –300 300 –350 350 –350 350 –400 400 –400 400 –450 450 –500 500 ps
19
time from CK/CK#
DQS read pream-
ble
t_RPRE
MIN = 0.9 × ^tCK
MAX = 1.1 × ^tCK
t_{CK 17, 18,}
19
DQS read
postamble
t_RPST
MIN = 0.4 × ^tCK
MAX = 0.6 × ^tCK
t_{CK 17, 18,}
19, 20
CK/CK# to DQS
t_LZ1
Low-Z
MIN = ^tAC (MIN)
MAX = ^tAC (MAX)
ps 19, 21,
22