English
Language : 

MT47H64M8B6-25ELDTR Datasheet, PDF (28/133 Pages) Micron Technology – 512Mb: x4, x8, x16 DDR2 SDRAM
512Mb: x4, x8, x16 DDR2 SDRAM
Electrical Specifications – IDD Parameters
Table 11: DDR2 IDD Specifications and Conditions (Die Revision G)
Notes: 1–7 apply to the entire table
Configura-
-25E/
Parameter/Condition
Symbol
tion
-187E -25 -3E/-3 -37E -5E
Operating one bank active-pre-
IDD0
charge current: tCK = tCK (IDD), tRC =
tRC (IDD), tRAS = tRAS MIN (IDD); CKE is
HIGH, CS# is HIGH between valid com-
mands; address bus inputs are switch-
ing; Data bus inputs are switching
x4, x8
x16
75
65
60
55
55
90
80
75
70
70
Operating one bank active-read-
IDD1
precharge current: IOUT = 0mA; BL =
4, CL = CL (IDD), AL = 0; tCK = tCK (IDD),
tRC = tRC (IDD), tRAS = tRAS MIN (IDD),
tRCD = tRCD (IDD); CKE is HIGH, CS# is
HIGH between valid commands; ad-
x4, x8
x16
85
75
100
95
dress bus inputs are switching; Data
pattern is same as IDD4W
Precharge power-down current:
IDD2P x4, x8, x16
7
7
All banks idle; tCK = tCK (IDD); CKE is
LOW; Other control and address bus
inputs are stable; Data bus inputs are
floating
70
65
65
90
85
85
7
7
7
Precharge quiet standby current:
All banks idle; tCK = tCK (IDD); CKE is
HIGH, CS# is HIGH; Other control and
address bus inputs are stable; Data
bus inputs are floating
IDD2Q
x4, x8
x16
28
24
22
20
19
30
26
24
22
20
Precharge standby current: All
banks idle; tCK = tCK (IDD); CKE is
HIGH, CS# is HIGH; Other control and
address bus inputs are switching; Da-
ta bus inputs are switching
IDD2N
x4, x8
x16
34
28
25
23
21
36
30
27
25
23
Active power-down current: All
IDD3Pf Fast PDN exit 23
18
15
14
13
banks open; tCK = tCK (IDD); CKE is
MR12 = 0
LOW; Other control and address bus IDD3Ps Slow PDN exit 9
9
9
9
9
inputs are stable; Data bus inputs are
MR12 = 1
floating
Active standby current: All banks
open; tCK = tCK (IDD), tRAS = tRAS
MAX (IDD), tRP = tRP (IDD); CKE is
HIGH, CS# is HIGH between valid com-
mands; Other control and address bus
inputs are switching; Data bus inputs
are switching
IDD3N
x4, x8
x16
40
33
30
27
24
42
35
32
29
26
Units
mA
mA
mA
mA
mA
mA
mA
PDF: 09005aef82f1e6e2
512MbDDR2.pdf - Rev. T 2/12 EN
28
Micron Technology, Inc. reserves the right to change products or specifications without notice.
‹ 2004 Micron Technology, Inc. All rights reserved.