DS670 Datasheet, PDF (7/11 Pages) Xilinx, Inc – Low-power CMOS EPROM process

QPRO Family of XC1700E Configuration PROMs
XC1765E and XC17256E
Absolute Maximum Ratings
Table 5: Absolute Maximum Ratings
Symbol
Description
Range
Units
V_CC
V_PP
V_IN
V_TS
T_STG
T_j
Supply voltage relative to GND
Supply voltage relative to GND
Input voltage relative to GND
Voltage applied to High-Z output
Storage temperature (ambient)
Junction temperature (10s @ 1/16 in.)
–0.5 to +7.0
V
–0.5 to +12.5
V
–0.5 to V_CC + 0.5
V
–0.5 to V_CC + 0.5
V
–65 to +150
°C
+125
°C
Notes:
1. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only,
and functional operation of the device at these or any other conditions beyond those listed under Operating Conditions is not implied.
Exposure to Absolute Maximum Ratings conditions for extended periods of time may affect device reliability.
Operating Conditions
Table 6: Operating Conditions
Symbol
V_CC(1)
Description
Supply voltage relative to GND (T_C = –55°C to +125°C)
Notes:
1. During normal read operation V_PP must be connected to V_CC
DC Characteristics Over Operating Condition
Min Max Units
4.50 5.50
V
Table 7: DC Characteristics Over Operating Condition
Symbol
Description
V_IH
V_IL
V_OH
V_OL
I_CCA
I_CCS
High-level input voltage
Low-level input voltage
High-level output voltage (I_OH = –4 mA)
Low-level output voltage (I_OL = +4 mA)
Supply current, active mode (at maximum frequency)
Supply current, standby mode
I_L
C_IN
C_OUT
Input or output leakage current
Input capacitance (V_IN = GND, f = 1.0 MHz) sample tested
Output capacitance (V_IN = GND, f = 1.0 MHz) sample tested
Notes:
1. I_CCS standby current is specified for DATA pin that is pulled to V_CC or GND.
XC17256E
XC1765E
Min Max Units
2.0
V_CC
V
0
0.8
V
3.7
–
V
–
0.4
V
–
10
mA
–
50⁽¹⁾
µA
–
1.5⁽¹⁾
mA
–10
10
µA
–
10
pF
–
10
pF
DS670 (v1.0) December 3, 2010
www.xilinx.com
Product Specification
7