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| W25Q32JVTBIQ-TR Datasheet, PDF (64/76 Pages) Winbond – 3V 32M-BIT SERIAL FLASH MEMORY WITH DUAL, QUAD SPI | |||
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W25Q32JV
DESCRIPTION
/CS High to Power-down Mode
/CS High to Standby Mode without ID Read
/CS High to Standby Mode with ID Read
/CS High to next Instruction after Suspend
/CS High to next Instruction after Reset
/RESET pin Low period to reset the device
Write Status Register Time
Page Program Time
SYMBOL ALT
tDP(2)
tRES1(2)
tRES2(2)
tSUS(2)
tRST(2)
tRESET(2)
tW
tPP
MIN
1(3)
SPEC
TYP
MAX
3
3
1.8
20
30
10
15
0.7
3
UNIT
µs
µs
µs
µs
µs
µs
ms
ms
Sector Erase Time (4KB)
tSE
45
400
ms
Block Erase Time (32KB)
tBE1
120
1,600
ms
Block Erase Time (64KB)
tBE2
150
2,000
ms
Chip Erase Time
tCE
10
50
s
Notes:
1. Clock high or Clock low must be more than or equal to 45%Pc. Pc=1/fC(MAX).
2. Value guaranteed by design and/or characterization, not 100% tested in production.
3. Itâs possible to reset the device with shorter tRESET (as short as a few hundred ns), a 1us minimum is recommended to ensure reliable
operation.
4. Tested on sample basis and specified through design and characterization data. TA = 25° C, VCC = 3.0V, 25% driver strength.
5. 4-bytes address alignment for Quad Read, start address from [A1,A0]=(0,0).
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