W25Q32JVTBIQ-TR Datasheet, PDF (61/76 Pages) Winbond – 3V 32M-BIT SERIAL FLASH MEMORY WITH DUAL, QUAD SPI

W25Q32JV
9.4 DC Electrical Characteristics-
PARAMETER
SYMBOL CONDITIONS
Input Capacitance
Output Capacitance
Input Leakage
I/O Leakage
Standby Current
CIN(1)
Cout⁽¹⁾
ILI
ILO
ICC1
Power-down Current
ICC2
Current Read Data /
Dual /Quad 50MHz⁽²⁾
Current Read Data /
Dual /Quad 80MHz⁽²⁾
Current Read Data /
Dual Output Read/Quad
Output Read 104MHz⁽²⁾
Current Write Status
Register
Current Page Program
Current Sector/Block
Erase
Current Chip Erase
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
ICC3
ICC3
ICC3
ICC4
ICC5
ICC6
ICC7
VIL
VIH
VOL
VOH
VIN = 0V⁽¹⁾
VOUT = 0V⁽¹⁾
/CS = VCC,
VIN = GND or VCC
/CS = VCC,
VIN = GND or VCC
C = 0.1 VCC / 0.9 VCC
DO = Open
C = 0.1 VCC / 0.9 VCC
DO = Open
C = 0.1 VCC / 0.9 VCC
DO = Open
/CS = VCC
/CS = VCC
/CS = VCC
/CS = VCC
IOL = 100 µA
IOH = –100 µA
SPEC
UNIT
MIN
TYP
MAX
6
pF
8
pF
±2
µA
±2
µA
10
50
µA
1
15
µA
15
mA
18
mA
20
mA
20
20
20
20
–0.5
VCC x 0.7
VCC – 0.2
25
mA
25
mA
25
mA
25
mA
VCC x 0.3
V
VCC + 0.4
V
0.2
V
V
Notes:
1. Tested on sample basis and specified through design and characterization data. TA = 25° C, VCC = 3.0V.
2. Checker Board Pattern.
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Publication Release Date: August 30, 2016
Revision C