W25Q32JVTBIQ-TR Datasheet, PDF (43/76 Pages) Winbond – 3V 32M-BIT SERIAL FLASH MEMORY WITH DUAL, QUAD SPI

W25Q32JV
Power-down (B9h)
Although the standby current during normal operation is relatively low, standby current can be further
reduced with the Power-down instruction. The lower power consumption makes the Power-down instruction
especially useful for battery powered applications (See ICC1 and ICC2 in AC Characteristics). The
instruction is initiated by driving the /CS pin low and shifting the instruction code “B9h” as shown in Figure
37.
The /CS pin must be driven high after the eighth bit has been latched. If this is not done the Power-down
instruction will not be executed. After /CS is driven high, the power-down state will entered within the time
duration of tDP (See AC Characteristics). While in the power-down state only the Release Power-down /
Device ID (ABh) instruction, which restores the device to normal operation, will be recognized. All other
instructions are ignored. This includes the Read Status Register instruction, which is always available
during normal operation. Ignoring all but one instruction makes the Power Down state a useful condition for
securing maximum write protection. The device always powers-up in the normal operation with the standby
current of ICC1.
/CS
CLK
Mode 3
Mode 0
DI
(IO₀)
01234567
Instruction (B9h)
tDP
Mode 3
Mode 0
Stand-by current
Power-down current
Figure 37. Deep Power-down Instruction
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Publication Release Date: August 30, 2016
Revision C