W25X16_08 Datasheet, PDF (38/50 Pages) Winbond – 16M-BIT, 32M-BIT, AND 64M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI

W25X16, W25X16A, W25X32, W25X64
AC Electrical Characteristics (cont’d)
DESCRIPTION
SYMBOL ALT
MIN
SPEC
TYP
MAX
UNIT
/HOLD Active Setup Time relative to CLK
tHLCH
5
ns
/HOLD Active Hold Time relative to CLK
tCHHH
5
ns
/HOLD Not Active Setup Time relative to CLK
tHHCH
5
ns
/HOLD Not Active Hold Time relative to CLK
tCHHL
5
ns
/HOLD to Output Low-Z
tHHQX⁽²⁾
tLZ
7
ns
/HOLD to Output High-Z
tHLQZ⁽²⁾
tHZ
12
ns
Write Protect Setup Time Before /CS Low
tWHSL⁽³⁾
20
ns
Write Protect Hold Time After /CS High
tSHWL⁽³⁾
100
ns
/CS High to Power-down Mode
tDP⁽²⁾
3
µs
/CS High to Standby Mode without Electronic
Signature Read
tRES1⁽²⁾
3
µs
/CS High to Standby Mode with Electronic
Signature Read
tRES2⁽²⁾
1.8
µs
Write Status Register Time
tW
10
15
ms
Byte Program Time (First Byte) ⁽⁴⁾
t_BP1
Additional Byte Program Time (After First Byte) ⁽⁴⁾
t_BP2
Page Program Time
tPP
30
50
µs
6
12
µs
1.6
3
ms
Sector Erase Time (4KB) W25X16, W25X32
tSE
Sector Erase Time (4KB) W25X16A, W25X64
150
300
ms
120
200
ms
Block Erase Time (64KB) W25X16, W25X32
tBE
Block Erase Time (64KB) W25X16A, W25X64
0.8
2
s
0.32
1
s
Chip Erase Time W25X16
tCE
Chip Erase Time W25X16A
Chip Erase Time W25X32, W25X64
25
40
s
10
20
s
40
80
s
Notes:
1.
2.
3.
4.
Clock high + Clock low must be less than or equal to 1/fC.
Value guaranteed by design and/or characterization, not 100% tested in production.
Only applicable as a constraint for a Write Status Register instruction when Sector Protect Bit is set to 1.
For multiple bytes after first byte within a page, t_BPN = t_{BP1 +} t_{BP2 * N} (typical) and t_BPN = t_{BP1 +} t_{BP2 * N} (max), where N
= number of bytes programmed.
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