W964B6BBN Datasheet, PDF (3/30 Pages) Winbond – 1M WORD X 16BIT LOW POWER PSEUDO SRAM

W964B6BBN
1. GENERAL DESCRIPTION
W964B6BBN is a 16M bits CMOS pseudo static random access memory (Pseudo SRAM), organized
as 1M words x 16 bits. Using advanced single transistor DRAM architecture and 0.175 µm process
technology; W964B6BBN delivers fast access cycle time and low power consumption. It is suitable for
mobile device application such as Cellular Phone and PDA, which high-density buffer is needed and
power dissipation is most concerned
2. FEATURES
• Asynchronous SRAM interface
• Fast access cycle time:
− tRC = 70 nS (-70), 80 nS (-80)
• Low power consumption:
− IDDA1 = 20 mA Max.
− IDDS1 = 70 µA Max.
• Byte write control
• Wide operating conditions:
− VDD = +2.3V to +2.7V
• Temperature
− TA = 0°C to +70°C
− TA = -25°C to +85°C (Extended temperature)
− TA = -40°C to +85°C (Industrial temperature)
3. PRODUCT OPTIONS
PARAMETER
tRC
IDDS1
IDDA1
VDD
W964B6BBN70
70 nS Min.
70 µA Max.
20 mA
2.3V to 2.7V
W964B6BBN80
80 nS Min.
70 µA Max.
20 mA
2.3V to 2.7V
Publication Release Date: March 31, 2003
-3-
Revision A1