W964B6BBN Datasheet, PDF (13/30 Pages) Winbond – 1M WORD X 16BIT LOW POWER PSEUDO SRAM

W964B6BBN
AC Characteristics, Continued
Power Down and Power Down Program Parameters
PARAMETER
CE2 Low Setup Time for Power Down Entry
CE2 Low Hold Time after Power Down Entry
SYM.
tCSP
tC2LP
-70
Min. Max.
10 -
70 -
-80
UNIT NOTES
Min. Max.
10 - nS
80 - nS
CE1 High Setup Time following CE2 High after
tCHS
10
-
10
- nS
Power Down Exit
Other Timing Parameters
PARAMETER
CE1 High to OE Invalid Time for Standby Entry
-70
SYM.
-80
UNIT NOTES
Min. Max. Min. Max.
tCHOX 10
-
10
- nS
CE1 High to WE Invalid Time for Standby Entry ^{tCHWX 10}
-
10
- nS *1
CE2 Low Hold Time after Power-up
tC2LH
50
-
50
- µS *2
CE2 High Hold Time after Power-up
tC2HL
50
-
50
- µS *3
CE1 High Hold Time following CE2 High after
Power-up
tCHH 350 - 350 - µS *2
Input Transition Time
tT
1 25 1 25 nS *4
Notes:
*1: Some data might be written into any address location if tCHWX(min.) is not satisfied.
*2: Must satisfy t_{CHH(min.) after tC2LH(min.).}
*3: Requires Power Down mode entry and exit after tC2HL.
*4: The Input Transition Time (tT) at AC testing is 5ns as shown in below. If actual tT is longer than 5 nS, it may violate AC
specified of some timing parameters.
AC Test Conditions
SYMBOL
DESCRIPTION
VIH Input High Level
VIL
VREF
Input Low Level
Input Timing Measurement Level
TT
Input Transition Time
TEST SETUP
VDD = 2.3V to 2.7V
VDD = 2.3V to 2.7V
VDD = 2.3V to 2.7V
Between VIL and VIH
VALUE
2.0
0.4
1.1
5
UNIT
V
V
V
nS
NOTE
- 13 -
Publication Release Date: March 31, 2003
Revision A1