W963L6ABN Datasheet, PDF (3/30 Pages) Winbond – 512K WORD X 16 BIT LOW POWER PSEUDO SRAM

W963L6ABN
1. GENERAL DESCRIPTION
W963L6ABN is a 8M bits CMOS pseudo static random access memory (Pseudo SRAM), organized
as 512K words x 16 bits. Using advanced single transistor DRAM architecture and 0.175 µm process
technology; W963L6ABN delivers fast access cycle time and low power consumption. It is suitable for
mobile device application such as Cellular Phone and PDA, which high-density buffer is needed and
power dissipation is most concerned.
2. FEATURES
• Asynchronous SRAM interface
• Fast access cycle time:
− tRC = 70 nS (-70), 80 nS (-80)
• Low power consumption:
− IDDA1 = 20 mA Max.
− IDDS1 = 70 µA Max.
• Byte write control
• Wide operating conditions:
−VDD = +2.3V to +2.7V or
+2.7V to +3.3V
• Temperature
− TA = 0°C to +70°C
− TA = -25°C to +85°C (Extended temperature)
− TA = -40°C to +85°C (Industrial temperature)
3. PRODUCT OPTIONS
PARAMETER
tRC
IDDS1
IDDA1
VDD
W963L6ABN70
70 nS Min.
70 µA Max.
20 mA
2.3V to 2.7V
2.7V to 3.3V
W963L6ABN80
80 nS Min.
70 µA Max.
20 mA
2.3V to 2.7V
2.7V to 3.3V
Publication Release Date: March 11, 2003
-3-
Revision A1