W963L6ABN Datasheet, PDF (27/30 Pages) Winbond – 512K WORD X 16 BIT LOW POWER PSEUDO SRAM

W963L6ABN
Data Retention
Low VDD Characteristics
PARAMETER
SYM.
TEST CONDITIONS
MIN. MAX. UNIT
VDD Data Retention Supply
Voltage
VDR ^{CE1 = CE2 ≥ VDD -0.2V or,}
CE1 = CE2 = VIH
2.1 3.6 V
VDD = VDD (23),
-
L
IDR ^{VIN = VDD -0.2V to VIH (23) or VIL}
VDD Data Retention ^version
CE1 = CE2 = VIH (23), IOUT = 0 mA
-
Supply Current
VDD = VDD(23),
-
L
IDR1 ^{VIN ≤ 0.2V or VIN ≥ VDD -0.2V,}
version
CE1 = CE2 ≥ VDD -0.2V, IOUT = 0 mA
-
5
mA
1.5
200
µA
100
Data Retention Setup Time tDRS VDD = VDD (27) at data retention entry
0
-
nS
Data Retention Recovery
Time
tDRR VDD = VDD (27) after data retention
200 -
nS
VDD Voltage Transition Time ΔV/Δt
0.2 - V/µS
Data Retention Timing
3.1V
VDD
2.7V
tDRS
∆V/∆t
tDRR
∆V/∆t
CE2
2.1V
CE1
≥ VDD-0.2V or VIH(23) min
0.4V
VSS
Data Retention Mode
Data bus must be in High-Z at data retention entry.
- 27 -
Publication Release Date: March 11, 2003
Revision A1