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W28F641B Datasheet, PDF (18/31 Pages) Winbond – 64MBIT (4MBIT × 16) PAGE MODE DUAL WORK FLASH MEMORY
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W28F641B/T
DC Characteristics
PARAMETER
SYM. TEST CONDITIONS
Input Load Current
(note 1)
ILI
Output Leakage Current
(note1)
ILO
VDD Standby Current
(note 1)
ICCS
VDD Automatic Power Saving Current
(note 1, 4)
VDD Reset Power-Down Current
(note 1)
Average VDD Read Current
Normal Mode (note1, 7)
Average VDD Read Current 8 Word
Page Mode (note1, 7)
Read
ICCAS
ICCD
ICCR
VDD (Page Buffer) Program Current
(note 1, 5, 7)
ICCW
VDD Block Erase, Full Chip Erase
Current (note 1, 5, 7)
ICCE
VDD (Page Buffer) Program or Block
Erase Suspend Current (note 1, 2, 7)
VPP Standby or Read Current
(note 1, 6, 7)
VPP (Page Buffer) Program Current
(note 1, 5, 6, 7)
ICCWS
ICCES
IPPS
IPPR
IPPW
VPP Block Erase, Full Chip Erase
Current (note 1, 5, 6, 7)
IPPE
VPP (Page Buffer) Program Suspend
Current (note 1, 6, 7)
IPPWS
VPP Block Erase Suspend Current (note
1, 6, 7)
IPPES
VDD = VDD Max.,
VDDQ = VDDQ Max.,
VIN/VOUT = VDDQ or VSS
VDD = VDD Max. #CE =
#RESET = VDDQ ±0.2V,
#WP = VDDQ or VSS
VDD = VDD Max. #CE = VSS
±0.2V, #WP = VDDQ or VSS
#RESET = VSS ±0.2V
VDD = VDD Max.,
#CE = VIL, #OE = VIH,
f = 5 MHz
VPP = VPPH1
VPP = VPPH2
VPP = VPPH1
VPP = VPPH2
#CE = VIH
VPP ≤ VDD
VPP = VPPH1
VPP = VPPH2
VPP = VPPH1
VPP = VPPH2
VPP = VPPH1
VPP = VPPH2
VPP = VPPH1
VPP = VPPH2
VDD = 2.7V to 3.6V
Min. Typ. Max.
-1.0
+1.0
-1.0
+1.0
4
20
4
20
4
20
15
25
5
10
20
60
10
20
10
30
10
30
10 200
2
5
2
5
10
30
2
5
5
15
2
5
10 200
2
5
10 200
UNIT
µA
µA
µA
µA
µA
mA
mA
mA
mA
mA
mA
µA
µA
µA
mA
µA
mA
µA
µA
µA
µA
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