W9864G6JT Datasheet, PDF (14/42 Pages) Winbond – 1M  4 BANKS  16 BITS SDRAM

W9864G6JT
9.4 DC Characteristics
(VDD = 3.3V  0.3V, TA = 0 to 70°C for -6, TA = -40 to 85°C for -6I/-6A, TA / TCASE = -40 to 105°C for -6K)
PARAMETER
Operating Current
tCK = min., tRC = min.
Active precharge command cycling without
burst operation
Standby Current
tCK = min., CS = VIH
VIH /L = VIH (min.) / VIL (max.)
Bank: inactive state
Standby Current
CLK = VIL, CS = VIH
VIH/L = VIH (min.) / VIL (max.)
Bank: inactive state
1 Bank Operation
CKE = VIH
CKE = VIL
(Power Down mode)
CKE = VIH
CKE = VIL
(Power Down mode)
MAX.
SYM.
-6/-6I/-6A -6K
IDD1
50
50
IDD2
25
25
IDD2P
2
5
IDD2S
12
12
IDD2PS
2
5
No Operating Current
tCK = min., CS = VIH (min.)
Bank: active state (4 Banks)
Burst Operating Current
(tCK = min.)
Read/ Write command cycling
Auto Refresh Current
(tCK = min.)
Auto refresh command cycling
Self Refresh Current
(CKE = 0.2V)
Self refresh mode
CKE = VIH
IDD3
35
35
CKE = VIL
(Power Down mode)
IDD3P
12
15
IDD4
75
75
IDD5
60
60
IDD6
2
5
UNIT NOTES
3
3
3
mA
3, 4
3
PARAMETER
Input Leakage Current
(0V  VIN  VDD, all other pins not under test = 0V)
Output Leakage Current
(Output disable , 0V  VOUT  VDDQ)
LVTTL Output “H” Level Voltage
(IOUT = -2 mA)
LVTTL Output “L” Level Voltage
(IOUT = 2 mA )
SYM.
II(L)
IO(L)
VOH
VOL
MIN.
-5
-5
2.4
-
MAX.
5
5
-
0.4
UNIT
µA
NOTES
µA
V
V
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Publication Release Date: Dec. 23, 2011
Revision A01