SI4816BDY_09 Datasheet, PDF (9/13 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4816BDY
Vishay Siliconix
SCHOTTKY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
10
10
T_J = 150 °C
1
0.1
30 V
24 V
0.01
T_J = 25 °C
0.001
0.0001
0
25
50
75
100 125 150
T_J – Temperature (°C)
Reverse Current vs. Junction Temperature
200
1
0.0
0.3
0.6
0.9
1.2
1.5
V_F − Forward Voltage Drop (V)
Forward Voltage Drop
160
120
80
C_oss
40
0
0
6
12
18
24
30
V_DS – Drain-to-Source Voltage (V)
Capacitance
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73026.
Document Number: 73026
S09-0394-Rev. D, 09-Mar-09
www.vishay.com
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