SI4816BDY_09 Datasheet, PDF (6/13 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4816BDY
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
40
V_GS = 10 thru 5 V
32
32
4V
24
24
16
8
0
0
0.020
3V
2V
1
2
3
4
5
V_DS – Drain-to-Source Voltage (V)
Output Characteristics
0.016
0.012
0.008
V_GS = 4.5 V
V_GS = 10 V
0.004
0.000
0
5
10
15
20
25
30
I_D – Drain Current (A)
On-Resistance vs. Drain Current
6
5
V_DS = 15 V
I_D = 9.5 A
4
3
2
1
0
0
3
6
9
12
15
Q_g – Total Gate Charge (nC)
Gate Charge
16
T_C = 125 °C
8
25 °C
- 55 °C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
V_GS – Gate-to-Source Voltage (V)
Transfer Characteristics
2000
C_iss
1600
1200
800
C_oss
400
C_rss
0
0
6
12
18
24
30
V_DS – Drain-to-Source Voltage (V)
Capacitance
1.6
V_GS = 10 V
1.4
I_D = 9.5 A
1.2
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J – Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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6
Document Number: 73026
S09-0394-Rev. D, 09-Mar-09