SI4816BDY_09 Datasheet, PDF (7/13 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
0.05
Si4816BDY
Vishay Siliconix
T_J = 150 °C
10
T_J = 25 °C
0.04
0.03
0.02
0.01
I_D = 9.5 A
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD – Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
10
1
0.1
0.01
V_DS = 30 V
V_DS = 24 V
0.001
0.0001
0.00001
0
25
50
75
100 125 150
T_J – Temperature (°C)
Reverse Current vs. Junction Temperature
100
Limited by R_DS(on)*
0.00
0
2
4
6
8
10
V_GS – Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
100
80
60
40
20
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
I_DM Limited
10
I_D(on)
1 ^Limited
1 ms
10 ms
100 ms
0.1
T_C = 25 °C
Single Pulse
1s
10 s
DC
BVDSS Limited
0.01
0.1
1
10
100
V_DS – Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area
Document Number: 73026
S09-0394-Rev. D, 09-Mar-09
www.vishay.com
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