SI4816BDY_09 Datasheet, PDF (1/13 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4816BDY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
Channel-1
Channel-2
0.0185 at V_GS = 10 V
0.0225 at V_GS = 4.5 V
30
0.0115 at V_GS = 10 V
0.016 at V_GS = 4.5 V
I_D (A)
6.8
6.0
11.4
9.5
Q_g (Typ.)
7.8
11.6
SCHOTTKY PRODUCT SUMMARY
V_DS (V)
30
V_SD (V)
Diode Forward Voltage
0.50 V at 1.0 A
I_F (A)
2.0
G_{1 1}
A/S_{2 2}
A/S_{2 3}
G_{2 4}
SO-8
8 ^D1
7 ^D2^/S1
6 ^D2^/S1
5 ^D2^/S1
Top View
Ordering Information: Si4816BDY-T1-E3 (Lead (Pb)-free)
Si4816BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• LITTLE FOOT^® Plus Power MOSFET
• 100 % R_g Tested
D₁
G₁
N-Channel 1
MOSFET
S₁/D₂
G₂
N-Channel 2
MOSFET
S₂
Schottky Diode
A
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Channel-1
Channel-2
Parameter
Symbol
10 s
Steady State 10 s Steady State Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
30
V
V_GS
20
Continuous Drain Current (T_J = 150 °C)^a
T_A = 25 °C
T_A = 70 °C
I_D
6.8
5.5
5.8
11.4
8.2
4.6
9.0
6.5
Pulsed Drain Current
I_DM
30
40
A
Continuous Source Current (Diode Conduction)^a
I_S
1
0.9
2.2
1.15
Single Pulse Avalanche Current
L = 0.1 mH
I_AS
10
Avalanche Energy
E_AS
5
20
20
mJ
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 70 °C
P_D
1.4
0.9
1.0
2.4
1.25
W
0.64
1.5
0.8
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 73026
S09-0394-Rev. D, 09-Mar-09
t ≤ 10 s
Steady State
Steady State
Symbol
R_thJA
R_thJF
Channel-1
Typ. Max.
72
90
100
125
51
63
Channel-2
Typ. Max.
43
53
82
100
25
30
Schottky
Typ. Max.
48
60
80
100
28
35
Unit
°C/W
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