SI4816BDY_09 Datasheet, PDF (2/13 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4816BDY
Vishay Siliconix
MOSFET SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min. ^Typ.a Max.
Unit
Static
Gate Threshold Voltage
V_GS(th)
V_DS = V_GS, I_D = 250 µA
Ch-1 1.0
Ch-2 1.0
3.0
V
3.0
Gate-Body Leakage
I_GSS
V_DS = 0 V, V_GS = 20 V
Ch-1
Ch-2
100
nA
100
Zero Gate Voltage Drain Current
I_DSS
V_DS = 30 V, V_GS = 0 V
V_DS = 30 V, V_GS = 0 V, T_J = 85 °C
Ch-1
Ch-2
Ch-1
Ch-2
1
100
µA
15
2000
On-State Drain Current^b
I_D(on)
V_DS = 5 V, V_GS = 10 V
Ch-1
20
Ch-2
30
A
V_GS = 10 V, I_D = 6.8 A
Ch-1
0.0155 0.0185
Drain-Source On-State Resistance^b
R_DS(on)
V_GS = 10 V, I_D = 11.4 A
V_GS = 4.5 V, I_D = 6.0 A
Ch-2
Ch-1
0.0093 0.0115
Ω
0.0185 0.0225
V_GS = 4.5 V, I_D = 9.5 A
Ch-2
0.013 0.016
Forward Transconductance^b
g_fs
V_DS = 15 V, I_D = 6.8 A
V_DS = 15 V, I_D = 11.4 A
Ch-1
Ch-2
30
31
S
Diode Forward Voltage^b
V_SD
I_S = 1 A, V_GS = 0 V
I_S = 1 A, V_GS = 0 V
Ch-1
Ch-2
0.73
1.1
V
0.47
0.5
Dynamic^a
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Ch-1
Q_g
Channel-1
Ch-2
Q_gs
V_DS = 15 V, V_GS = 5 V, I_D = 6.8 A
Channel-2
Ch-1
Ch-2
Q_gd
V_DS = 15 V, V_GS = 5 V, I_D = - 11.4 A ^Ch-1
Ch-2
7.8
10
11.6
18
2.9
nC
4.8
2.3
3.7
Gate Resistance
R_g
Ch-1 1.5
3.0
4.5
Ω
Ch-2 0.9
1.8
2.7
Turn-On Delay Time
Rise Time
t_d(on)
t_r
Channel-1
V_DD = 15 V, R_L = 15 Ω
I_D ≅ 1 A, V_GEN = 10 V, R_g = 6 Ω
Ch-1
Ch-2
Ch-1
Ch-2
11
17
13
20
9
15
9
15
Turn-Off Delay Time
Fall Time
t_d(off)
t_f
Channel-2
V_DD = 15 V, R_L = 15 Ω
I_D ≅ 1 A, V_GEN = 10 V, R_g = 6 Ω
Ch-1
Ch-2
Ch-1
Ch-2
24
40
31
50
ns
9
15
11
17
Source-Drain Reverse Recovery Time
t_rr
I_F = 1.3 A, dI/dt = 100 A/µs
I_F = 2.2 A, dI/dt = 100 µA/µs
Ch-1
Ch-2
20
35
25
40
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
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Document Number: 73026
S09-0394-Rev. D, 09-Mar-09