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SI4816BDY_09 Datasheet, PDF (5/13 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
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CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
Limited by RDS(on)*
IDM Limited
2
1
Duty Cycle = 0.5
10
1
ID(on)
Limited
1 ms
10 ms
100 ms
0.1
TC = 25 °C
Single Pulse
1s
10 s
DC
BVDSS Limited
0.01
0.1
1
10
100
VDS – Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
Si4816BDY
Vishay Siliconix
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10- 4
10- 3
2
1
Duty Cycle = 0.5
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 100 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
10- 2
10- 1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10- 4
10- 3
10- 2
10- 1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Document Number: 73026
S09-0394-Rev. D, 09-Mar-09
www.vishay.com
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